SEMICONDUCTOR PROTECTION FUSES

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ETCList of Unclassifed Manufacturers

未分類制造商

SEMICONDUCTOR PROTECTION FUSES

文件：435.52 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

包裝：袋 類別：工業(yè)自動(dòng)化與控制 氣動(dòng)，液壓 - 配件 描述：SAE BAR MANIFOLD

ENERPAC PRODUCTION AUTOMATION

絲印：A60R175S6Z；Package：TO-220FA；600V 0.175? N-channel MOSFET

? Description Superior 6th generation SJ MOSFETs (S6-series) are cutting-edge high voltage power MOSFETs, based on Magnachip’s extensive design expertise and years of experience. The main strengths of S6- series are low on-resistance, low gate charge and reduced tendency for ringing. As a resul

文件：829.95 Kbytes 頁數(shù)：10 Pages

MGCHIP

絲?。?a target="_blank" title="Marking" href="/a60r1k0rfz/marking.html">A60R1K0RFZ；Package：TO-220FA；600V 1.0? N-channel MOSFET

? Description MMF60R1K0RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

文件：740 Kbytes 頁數(shù)：10 Pages

MGCHIP

絲?。?a target="_blank" title="Marking" href="/a6042ag/marking.html">A6042AG；Package：DFN5X6-8L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6042AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Automotive application ● Power switching application ● Hard switched and high frequency circuits ●

文件：628.61 Kbytes 頁數(shù)：6 Pages

NCEPOWER

新潔能

絲印：A6050KA；Package：TO-252-2L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON)

文件：1.05066 Mbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/a6058k/marking.html">A6058K；Package：TO-252-2L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6058K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =64A RDS(ON)

文件：905.23 Kbytes 頁數(shù)：6 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/a6080k/marking.html">A6080K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCEA6080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

文件：934.36 Kbytes 頁數(shù)：6 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/a60a/marking.html">A60A；Package：SMA；Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

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CTC

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