| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMG2305UXQ General Features VDS = -20V ID =-4.9A RDS(ON) 文件：2.67243 Mbytes 頁數：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description The IRLML2244 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON) 文件：2.67241 Mbytes 頁數：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description The NTR3A30PZ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON) 文件：2.67241 Mbytes 頁數：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV27UPEA General Features VDS = -20V ID =-4.9A RDS(ON) 文件：2.67244 Mbytes 頁數：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>A5SHB；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET General Features VDS = -20V,ID = -4.1A RDS(ON) 文件：397.56 Kbytes 頁數：7 Pages | RECTRON 麗正國際 | RECTRON | ||
絲?。?strong>A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description The Si2323CDS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON) 文件：2.6724 Mbytes 頁數：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印：A5SHB；P-Channel Enhancement Mode Power MOSFET 文件：1.16282 Mbytes 頁數：3 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印：A5sHB；P-Channel Enhancement Mode Power MOSFET 文件：1.23589 Mbytes 頁數：3 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>A5SHB；Package：SOT23-3L；P-Channel Enhancement Mode MOSFET 文件：1.76088 Mbytes 頁數：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET 文件：2.58789 Mbytes 頁數：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEXPERIA |
24+ |
SOT23 |
1524 |
原裝正品,現貨庫存,1小時內發(fā)貨 |
詢價 | ||
NEXPERIA/安世 |
2025+ |
SOT-23 |
5000 |
原裝進口,免費送樣品! |
詢價 | ||
Nexperia(安世) |
25+ |
7589 |
全新原裝現貨,支持排單訂貨,可含稅開票 |
詢價 | |||
NEXPERIA/安世 |
2019+ |
SOT23 |
78550 |
原廠渠道 可含稅出貨 |
詢價 | ||
NEXPERIA |
25+ |
SMD |
918000 |
明嘉萊只做原裝正品現貨 |
詢價 | ||
NEXPERIA/安世 |
20+ |
TO-236AB |
120000 |
原裝正品 可含稅交易 |
詢價 | ||
NEXPERIA |
2024+ |
N/A |
70000 |
柒號只做原裝 現貨價秒殺全網 |
詢價 | ||
NEXPERIA/安世 |
24+ |
SOT-23 |
9600 |
原裝現貨,優(yōu)勢供應,支持實單! |
詢價 | ||
NEXPERIA/安世 |
23+ |
SOT-23 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
Nexperia/安世 |
20+ |
SOT-23 |
12118 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |
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