BiMOS II Latched Drivers

FEATURES ■ To 4.4 MHz Data Input Rate ■ High-Voltage, High-Current Outputs ■ CMOS, NMOS, TTL Compatible Inputs ■ Output Transient Protection ■ Internal Pull-Down Resistors ■ Low-Power CMOS Latches ■ Automotive Capable

文件：320.36 Kbytes 頁(yè)數(shù)：13 Pages

ALLEGRO

BiMOS II 鎖存型驅(qū)動(dòng)器

采用BiMOS II鎖存驅(qū)動(dòng)程序 (BiMOS II Latched Drivers)

Allegro

IEEE802.3bt PD Module

文件：842.46 Kbytes 頁(yè)數(shù)：22 Pages

SILVERTEL

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

文件：137.29 Kbytes 頁(yè)數(shù)：4 Pages

AOSMD

萬(wàn)國(guó)半導(dǎo)體

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5800E uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

文件：129.37 Kbytes 頁(yè)數(shù)：4 Pages

AOSMD

萬(wàn)國(guó)半導(dǎo)體