Cascadable Amplifier 10 to 400 MHz

Description The A411 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. Use of an im

文件：1.33975 Mbytes 頁數(shù)：2 Pages

MA-COM

10 TO 400 MHz CASCADABLE AMPLIFIER

Description The A411 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. Use of an im

文件：112.23 Kbytes 頁數(shù)：1 Pages

MACOM

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

The A416316B is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words X 16 bits. The A416316B is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and

文件：418.36 Kbytes 頁數(shù)：25 Pages

AMICC

聯(lián)笙電子

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

The A416316B is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words X 16 bits. The A416316B is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and

文件：418.36 Kbytes 頁數(shù)：25 Pages

AMICC

聯(lián)笙電子

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

The A416316B is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words X 16 bits. The A416316B is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and

文件：418.36 Kbytes 頁數(shù)：25 Pages

AMICC

聯(lián)笙電子

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

The A416316B is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words X 16 bits. The A416316B is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and

文件：418.36 Kbytes 頁數(shù)：25 Pages

AMICC

聯(lián)笙電子

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

The A416316B is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words X 16 bits. The A416316B is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and

文件：418.36 Kbytes 頁數(shù)：25 Pages

AMICC

聯(lián)笙電子

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

The A416316B is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words X 16 bits. The A416316B is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and

文件：418.36 Kbytes 頁數(shù)：25 Pages

AMICC

聯(lián)笙電子

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

The A416316B is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words X 16 bits. The A416316B is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and

文件：418.36 Kbytes 頁數(shù)：25 Pages

AMICC

聯(lián)笙電子

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

The A416316B is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words X 16 bits. The A416316B is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and

文件：418.36 Kbytes 頁數(shù)：25 Pages

AMICC

聯(lián)笙電子