| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>A2V；Package：MSOP；22 μA, RRIO, CMOS, 18 V Operational Amplifier FEATURES Micropower at high voltage (18 V): 22 μA maximum Low input bias current: 20 pA maximum Gain bandwidth product: 240 kHz at AV =100 typical Unity-gain crossover: 240 kHz ?3 dB closed-loop bandwidth: 310 kHz Slew rate: 80 V/ms Large signal voltage gain: 110 dB minimum Single-supply operat 文件：709.49 Kbytes 頁數(shù)：24 Pages | AD 亞德諾 | AD | ||
絲?。?strong>A2V；Package：MSOP；22 μA, RRIO, CMOS, 18 V Operational Amplifier FEATURES Micropower at high voltage (18 V): 22 μA maximum Low input bias current: 20 pA maximum Gain bandwidth product: 240 kHz at AV =100 typical Unity-gain crossover: 240 kHz ?3 dB closed-loop bandwidth: 310 kHz Slew rate: 80 V/ms Large signal voltage gain: 110 dB minimum Single-supply operat 文件：709.49 Kbytes 頁數(shù)：24 Pages | AD 亞德諾 | AD | ||
絲印：A2V；Package：MSOP；22 μA, RRIO, CMOS, 18 V Operational Amplifier FEATURES Micropower at high voltage (18 V): 22 μA maximum Low input bias current: 20 pA maximum Gain bandwidth product: 240 kHz at AV =100 typical Unity-gain crossover: 240 kHz ?3 dB closed-loop bandwidth: 310 kHz Slew rate: 80 V/ms Large signal voltage gain: 110 dB minimum Single-supply operat 文件：709.49 Kbytes 頁數(shù)：24 Pages | AD 亞德諾 | AD | ||
N--Channel Enhancement--Mode Lateral MOSFET Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems 文件：805.06 Kbytes 頁數(shù)：23 Pages | 恩XP | 恩XP | ||
N--Channel Enhancement--Mode Lateral MOSFET Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems 文件：805.06 Kbytes 頁數(shù)：23 Pages | 恩XP | 恩XP | ||
N--Channel Enhancement--Mode Lateral MOSFET Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems 文件：805.06 Kbytes 頁數(shù)：23 Pages | 恩XP | 恩XP | ||
N--Channel Enhancement--Mode Lateral MOSFET 文件：803.9 Kbytes 頁數(shù)：23 Pages | 恩XP | 恩XP | ||
N--Channel Enhancement--Mode Lateral MOSFET 文件：803.9 Kbytes 頁數(shù)：23 Pages | 恩XP | 恩XP | ||
N--Channel Enhancement--Mode Lateral MOSFET 文件：1.05655 Mbytes 頁數(shù)：25 Pages | 恩XP | 恩XP | ||
N--Channel Enhancement--Mode Lateral MOSFET 文件：1.05655 Mbytes 頁數(shù)：25 Pages | 恩XP | 恩XP |
詳細參數(shù)
- 型號：
A2V
- 功能描述：
IC OP AMP RR DUAL 8MSOP
- RoHS：
是
- 類別：
集成電路(IC) >> Linear - Amplifiers - Instrumentation
- 系列：
-
- 標準包裝：
160
- 放大器類型：
通用
- 電路數(shù)：
4
- 輸出類型：
滿擺幅
- 轉(zhuǎn)換速率：
10 V/µs
- 增益帶寬積：
9MHz
- -3db帶寬：
- 電流 -
- 輸入偏壓：
1pA 電壓 -
- 輸入偏移：
250µV 電流 -
- 電源：
730µA 電流 -
- 輸出/通道：
28mA 電壓 -
- 電源，單路/雙路(±)：
2.7 V ~ 5.5 V，±1.35 V ~ 2.75 V
- 工作溫度：
-40°C ~ 125°C
- 安裝類型：
表面貼裝
- 封裝/外殼：
16-SOIC（0.154，3.90mm 寬）
- 供應(yīng)商設(shè)備封裝：
16-SOIC N
- 包裝：
管件
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ADI(亞德諾) |
25+ |
MSOP-8 |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
ADI/亞德諾 |
20+ |
na |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
Analog Devices Inc. |
24+ |
8-MSOP |
53200 |
一級代理/放心采購 |
詢價 | ||
ADI(亞德諾)/LINEAR |
2447 |
MSOP-8 |
315000 |
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
ADI |
25+ |
MSOP-8 |
1000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
ADI(亞德諾)/LINEAR |
2021+ |
MSOP-8 |
499 |
詢價 | |||
AD |
1824+ |
NA |
16 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
ADI(亞德諾) |
23+ |
N/A |
10000 |
正規(guī)渠道,只有原裝! |
詢價 | ||
Analog Devices |
23+ |
22500 |
詢價 | ||||
ADI(亞德諾) |
23+ |
N/A |
10000 |
公司只做原裝，可來電咨詢 |
詢價 |
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相關(guān)庫存
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- 1N4003W
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- PTVS6V0S1UR-Q
- PMEG2005EH-Q
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- PESD3V3S4UF
- PMEG2005EH
- PMEG4020EPA
- NCS2003XV53T2G
- PESD3V3V1BCSF
- PESD3V3V1BCSF
- PMEG4020EPA-Q
