絲印：A120；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 頁(yè)數(shù)：7 Pages

SY

順燁電子

絲印：A120；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 頁(yè)數(shù)：6 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?strong>A120；1000 WATT TVS COMPONENT

文件：454.73 Kbytes 頁(yè)數(shù)：7 Pages

PROTEC

絲?。?a target="_blank" title="Marking" href="/a120a/marking.html">A120A；Package：SMA；Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

文件：65.88 Kbytes 頁(yè)數(shù)：3 Pages

CTC

沛?zhèn)?/p>

絲?。?a target="_blank" title="Marking" href="/a120ca/marking.html">A120CA；Package：SMA；Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

文件：65.88 Kbytes 頁(yè)數(shù)：3 Pages

CTC

沛?zhèn)?/p>

絲印：A120M1035；Package：PG-TO247-3-41；CoolSiC??Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET

文件：867.42 Kbytes 頁(yè)數(shù)：17 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/a120m1045/marking.html">A120M1045；Package：PG-TO247-3-41；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.44426 Mbytes 頁(yè)數(shù)：17 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/a120m1060/marking.html">A120M1060；Package：PG-TO247-3-41；CoolSiC??Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET

文件：812.77 Kbytes 頁(yè)數(shù)：17 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/a120m1080/marking.html">A120M1080；Package：PG-TO247-3-41；Silicon Carbide MOSFET

文件：843.07 Kbytes 頁(yè)數(shù)：17 Pages

INFINEON

英飛凌

BeO 12 dB FLANGED ATTENUATOR

Features: ? BeO Material ? DC - 3 GHz Performance ? 40 Watt Input Power ? Flange Mount

文件：134.09 Kbytes 頁(yè)數(shù)：1 Pages

BARRY

Vishay Barry