絲?。?strong>A09；Package：SOT-353；2-input AND gate with open-drain output

General description The 74AHC1G09 is a high-speed Si-gate CMOS device. The 74AHC1G09 provides the 2-input AND function with open-drain output. The output of the 74AHC1G09 is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND

文件：74.9 Kbytes 頁數(shù)：10 Pages

恩XP

絲?。?strong>A09；Package：SC-74A；2-input AND gate with open-drain output

1. General description The 74AHC1G09 is a single 2-input AND gate with open-drain output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. 2. Features ? Wide supply voltage range from 2.0 to 5.5 V ? Overvoltage toleran

文件：204.88 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲?。?strong>A09；Package：SC-74A；2-input AND gate with open-drain output

1. General description The 74AHC1G09-Q100 is a single 2-input AND gate with open-drain output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electronics Council (AEC)

文件：203.85 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲印：A09；Package：SC-74A；2-input AND gate with open-drain output

1. General description The 74AHC1G09-Q100 is a single 2-input AND gate with open-drain output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electronics Council (AEC)

文件：227.71 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世

絲?。?strong>A09；Package：SOT-23；30V P-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@-10V, [email protected]

文件：299.06 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/a09t/marking.html">A09T；Package：SOT23；N-Channel Enhancement Mode Power MOSFET

General Features Vos = 30V = 588 Rosion

文件：1.78813 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲印：A09T；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：1.71756 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/a09t/marking.html">A09T；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATION Load/Power Switching Interfacing Switching

文件：1.70533 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲印：A09T；Package：SOT-23；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Lithium battery protection Wireless impact Mobile phone fast charging

文件：1.95835 Mbytes 頁數(shù)：5 Pages

YFWDIODE

佑風(fēng)微

絲?。?a target="_blank" title="Marking" href="/a09t./marking.html">A09T.；Package：SOT-23；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

文件：1.16817 Mbytes 頁數(shù)：5 Pages

YFWDIODE

佑風(fēng)微