絲?。?strong>9R1；SLIM INDUCTOR-RoHS

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FENGJUI

峰瑞科技

絲?。?a target="_blank" title="Marking" href="/9r1k2c/marking.html">9R1K2C；Package：PG-TO252；CoolMOS? Power Transistor

Features ? Lowest figure-of-merit RON x Qg ? Extreme dv/dt rated ? High peak current capability ? Fully qualified according to JEDEC for Industrial Applications ? Pb-free lead plating; RoHS compliant,available in Halogen free mold compound ? Ultra low gate charge

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INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/9r103nl/marking.html">9R103NL；Package：SOP-8；MOSFETs Silicon N-channel MOS (U-MOS-H)

Applications ? Switching Voltage Regulators ? DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 2.5 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 10.4 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5) Enhancement mo

文件：259.16 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

CoolMOS Power Transistor

Features ? Lowest figure-of-merit RON x Qg ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge CoolMOS? 900V is designed for: ? Quasi Resonant Flyback / Forward topologi

文件：340.93 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌