9A, 950V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

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9A, 950V N-CHANNEL?POWER MOSFET

The UTC?9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation with low gate?voltages. This device is suitable for use as a load switch or in PWM applications. ? RDS(ON)?= 1.4??@VGS = 10 V \n? Low Reverse Transfer Capacitance ( C RSS = Typical 14 pF ) \n? Avalanche Energy Specified \n? Improved dv/dt Capability, High Ruggedness;

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9A, 950V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：263.88 Kbytes 頁數(shù)：6 Pages

UTC

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9A, 950V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：263.88 Kbytes 頁數(shù)：6 Pages

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N-CHANNEL POWER MOSFET

文件：263.88 Kbytes 頁數(shù)：6 Pages

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N-CHANNEL POWER MOSFET

文件：263.88 Kbytes 頁數(shù)：6 Pages

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N-CHANNEL POWER MOSFET

文件：263.88 Kbytes 頁數(shù)：6 Pages

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9A, 950V N-CHANNEL ?POWER MOSFET

The UTC?9N95-E uses UTC!ˉs advanced proprietary, planarstripe, DMOS technology to provide excellent R , low gate DS(ON)charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? RDS(ON) < 1.4 @ V GS?= 10V, ?I D = 4.5A \n? Low Reverse Transfer Capacitance ( C\n? Avalanche Energy Specified \n? Improved dv/dt Capability, High Ruggedness;

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