isc N-Channel MOSFET Transistor

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800V N-Channel MOSFET

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HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features ? International standard packages ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? Unclamped Inductive Switching (UIS) rated ? Low package inductance - easy to drive and to protect ? Fast i

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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