絲印：9B；Package：DFN1412D-3；Schottky barrier diode

1. General description Planar Schottky barrier diode encapsulated in an ultra small DFN1412D-3 (SOT8009, JEDEC MO340-CA) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Low forward voltage ? Low capacitance ? Leadless ultra small

文件：239.29 Kbytes 頁(yè)數(shù)：12 Pages

NEXPERIA

安世

絲印：9B；Package：SOT23；PNP BISS transistor

FEATURES ?High current (max. 1 A) ?Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS ?Battery powered units where high current and low power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic

文件：317.77 Kbytes 頁(yè)數(shù)：8 Pages

NEXPERIA

安世

絲?。?strong>9B；Package：MOLD；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Low voltage operation. VREF ≤ VOUT ≤ 24 V ? High accuracy. VREF = 1.26 V ± 2.4 ? Adjustable output voltage by two external resistors. ? Pin compatible with μPC1093. (μPC1944)

文件：312.25 Kbytes 頁(yè)數(shù)：13 Pages

RENESAS

瑞薩

絲?。?strong>9B；Package：MOLD；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Low voltage operation. VREF ≤ VOUT ≤ 24 V ? High accuracy. VREF = 1.26 V ± 2.4 ? Adjustable output voltage by two external resistors. ? Pin compatible with μPC1093. (μPC1944)

文件：312.25 Kbytes 頁(yè)數(shù)：13 Pages

RENESAS

瑞薩

絲?。?strong>9B；Package：X2SON；300-mA, Low-Dropout Regulator

文件：874.38 Kbytes 頁(yè)數(shù)：29 Pages

TI

德州儀器

絲印：9B；Package：SOD-323FL；Zener Diode

文件：1.63054 Mbytes 頁(yè)數(shù)：9 Pages

ROHM

羅姆

絲?。?strong>9B；Package：SOD-323FL；Zener Diode

文件：1.6984 Mbytes 頁(yè)數(shù)：9 Pages

ROHM

羅姆

絲?。?strong>9B；Package：SOD-323FL；Zener Diode

文件：1.7149 Mbytes 頁(yè)數(shù)：9 Pages

ROHM

羅姆

絲?。?strong>9B；Package：SOD-323FL；Zener Diode

文件：1.65846 Mbytes 頁(yè)數(shù)：9 Pages

ROHM

羅姆

絲?。?strong>9B；Package：SOD-323FL；Zener Diode

文件：1.62118 Mbytes 頁(yè)數(shù)：9 Pages

ROHM

羅姆