絲?。?strong>99；Package：SOD523；HIGH VOLTAGE SWITCHING DIODE

Features ? Fast Switching Speed: max. 50 ns ? High Reverse Breakdown Voltage: 300V ? Low Leakage Current: 100nA at room temperature ? Ultra Small Plastic SMD Package ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to

文件：410.75 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>99；Package：SOD523；HIGH VOLTAGE SWITCHING DIODE

Features ? Fast Switching Speed: max. 50 ns ? High Reverse Breakdown Voltage: 300V ? Low Leakage Current: 100nA at room temperature ? Ultra Small Plastic SMD Package ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to

文件：309.69 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>99；Package：SOT323；Voltage regulator double diodes

FEATURES ? Total power dissipation: max. 350 mW ? Approx. 5 VZ tolerance ? Working voltage range: nom. 2.4 to 15 V (E24 range). APPLICATIONS ? General regulation functions ? ESD and surge protection. DESCRIPTION Low-power voltage regulator diodes in a small SOT323 (SC-70) package.

文件：192.4 Kbytes 頁數(shù)：9 Pages

NEXPERIA

安世

絲印：99；Package：SOT663；Voltage regulator double diodes

1. General description Low-power voltage regulator diodes in a SOT663 ultra small plastic SMD package. 2. Features and benefits ? Total power dissipation: ≤ 425 mW ? Approximately 5 VZ tolerance ? Ultra small flat plastic SMD package ? Working voltage range nominal 2.4 to 15 V (E24 range)

文件：275.51 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲?。?strong>99；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 頁數(shù)：9 Pages

ROHM

羅姆

絲?。?strong>99；Package：SOT-416；Digital transistors (built-in resistor)

Features 1) Built-In Biasing Resistors, R1 = 100kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4)

文件：52.44 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆

絲印：99；Package：SOT-416；Digital transistors (built-in resistor)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost c

文件：58.79 Kbytes 頁數(shù)：2 Pages

ROHM

羅姆

絲?。?strong>99；Package：SOT-346；Digital transistors (built-in resistor)

Features 1) Built-In Biasing Resistors, R1 = 100kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4)

文件：52.44 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆

絲?。?strong>99；Package：SOT-346；Digital transistors (built-in resistor)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost c

文件：58.79 Kbytes 頁數(shù)：2 Pages

ROHM

羅姆

絲?。?strong>99；Package：VMT3；PNP -100mA -50V Digital Transistor

Features 1) Built-In Biasing Resistors, R1 = 100kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4)

文件：1.09353 Mbytes 頁數(shù)：8 Pages

ROHM

羅姆