P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

文件：1.21295 Mbytes 頁數(shù)：5 Pages

HOTTECH

合科泰

絲?。?a target="_blank" title="Marking" href="/9435tfcywp/marking.html">9435TFCYWP；Package：SOP-8；SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

文件：3.10684 Mbytes 頁數(shù)：5 Pages

TUOFENG

拓鋒半導(dǎo)體

KEYS FOR USE WITH FUNCTIONAL SAFETY ENCODER

文件：168.2 Kbytes 頁數(shù)：2 Pages

SENSATA

森薩塔

20V P-Channel Increased MOS FET

文件：299.94 Kbytes 頁數(shù)：2 Pages

FUMAN

富滿微

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes 頁數(shù)：1 Pages

KEYSTONE

Keystone Electronics Corp.

P-Channel 30-V (D-S) MOSFET

文件：972.94 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?strong>9435；Package：SOP-8；PWM applications

DESCRIPTION The G9435S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Application ●PWM applications ●Load switch ●Power management

文件：1.93672 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?strong>9435；Package：SOT-89；P-Channel MOSFET

文件：431.98 Kbytes 頁數(shù)：3 Pages

KEXIN

科信電子

場效應(yīng)管(MOSFET)

TDSEMIC

拓電半導(dǎo)體

場效應(yīng)管

HXY MOSFET

華軒陽電子