N-CHANNEL POWER MOSFET

文件：206.54 Kbytes 頁數(shù)：6 Pages

UTC

友順

絲印：8N50AT；Package：TO-220AB；8A 500V N-channel enhanced field effect transistor

文件：1.03515 Mbytes 頁數(shù)：7 Pages

YFWDIODE

佑風(fēng)微

絲?。?a target="_blank" title="Marking" href="/8n50af/marking.html">8N50AF；Package：TO-220F(0.5mm)；8A 500V N-channel enhanced field effect transistor

文件：1.03515 Mbytes 頁數(shù)：7 Pages

YFWDIODE

佑風(fēng)微

絲?。?a target="_blank" title="Marking" href="/8n50as/marking.html">8N50AS；Package：TO-263；8A 500V N-channel enhanced field effect transistor

文件：1.03515 Mbytes 頁數(shù)：7 Pages

YFWDIODE

佑風(fēng)微

絲?。?a target="_blank" title="Marking" href="/8n50as/marking.html">8N50AS；Package：TO-263；8A 500V N-channel enhanced field effect transistor

文件：1.03515 Mbytes 頁數(shù)：7 Pages

YFWDIODE

佑風(fēng)微

絲?。?a target="_blank" title="Marking" href="/8n50amj/marking.html">8N50AMJ；Package：TO-251；8A 500V N-channel enhanced field effect transistor

文件：1.03515 Mbytes 頁數(shù)：7 Pages

YFWDIODE

佑風(fēng)微

絲印：8N50AD；Package：TO-252；8A 500V N-channel enhanced field effect transistor

文件：1.03515 Mbytes 頁數(shù)：7 Pages

YFWDIODE

佑風(fēng)微

8A, 500V N-CHANNEL POWER MOSFET

The UTC 8N50H is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-stateresistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio ? RDS(ON)=0.8Ω @ VGS=10V\n? 100% Avalanche Tested;

UTC

友順

8A, 500V N-CHANNEL POWER MOSFET

The N-Channel enhancement mode silicon gate powerMOSFET is designed for high voltage, high speed powerswitching applications such as switching regulators, switchingconverters, solenoid, motor drivers, relay drivers. Low RDS(ON)< 0.87? @ VGS=10V. ID = 4.4A Single Pulse Avalanche Energy Rated Fast Switching Speeds Linear Transfer Characteristics High Input Impedance;

UTC

友順