Speaker Cable, 2 Conductor 10 AWG BC, Unshielded, CM

Product Description 2 Conductor 10 AWG, stranded (19x23) bare copper conductors, PVC/Nylon insulation, PVC jacket.

文件：150.83 Kbytes 頁數(shù)：2 Pages

BELDEN

百通

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product 8810 is Pb-free (meets RO

文件：507.45 Kbytes 頁數(shù)：4 Pages

TUOFENG

拓鋒半導(dǎo)體

N-channel power MOS field effect tube

文件：270.42 Kbytes 頁數(shù)：1 Pages

FUMAN

富滿微

Dual N-Channel Enhancement Mode MOSFET

文件：1.37293 Mbytes 頁數(shù)：4 Pages

HOTTECH

合科泰

Thermally Conductive Adhesive Transfer Tapes

文件：175.98 Kbytes 頁數(shù)：7 Pages

3M

Dual N-Channel 25-V (D-S) MOSFET

文件：973.56 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?strong>8810；Package：DFN2x2-6L；MOSFET

Features - Low on-resistance. - Low threshold. - Fast switching speed. - Low gate drive.

文件：535.37 Kbytes 頁數(shù)：6 Pages

COMCHIP

典琦

N 溝道功率 MOS 場效應(yīng)用管

FM

富滿微

絲印：8810；Package：TSSOP-8；Dual N-Channel MOSFET uses advanced trench technology

文件：1.51557 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

絲印：8810；Package：SOP-8；Dual N-Channel MOSFET

文件：1.78697 Mbytes 頁數(shù)：4 Pages

KEXIN

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