絲?。?strong>821；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：933.57 Kbytes 頁數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?strong>821；Package：DFN1010-6L；20V P-Channel Enhancement Mode MOSFET

Features ? Advanced Trench Process Technology ? Specially Designed for Switch Load, PWM Application, etc. ? ESD Protected ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard Mechanical Data ? Case : DFN1010-6L Package ? Terminals : Solderable per M

文件：1.54289 Mbytes 頁數(shù)：6 Pages

PANJIT

強(qiáng)茂

絲?。?strong>821；This specification applies to Wire Wound Power Inductors

文件：889.65 Kbytes 頁數(shù)：8 Pages

LEIDITECH

雷卯電子

絲印：821；This specification applies to Wire Wound Power Inductors

文件：889.65 Kbytes 頁數(shù)：8 Pages

LEIDITECH

雷卯電子

絲印：821；Package：SOT23-5；OPERATION INSTRUCTION

文件：1.5852 Mbytes 頁數(shù)：16 Pages

COREBAI

芯佰微

絲?。?strong>821；Package：SOT23-5L；10MHz, Low Power, CMOS, Rail-to-Rail Operational Amplifier

文件：343.96 Kbytes 頁數(shù)：11 Pages

E-CMOS

飛虹高科

絲印：821；Package：QFN-12；Low Noise Amplifier with Bypass Switch

文件：925.81 Kbytes 頁數(shù)：42 Pages

恩XP

絲?。?strong>821；SLIM INDUCTOR-RoHS

文件：289.89 Kbytes 頁數(shù)：3 Pages

FENGJUI

峰瑞科技

絲?。?strong>821；SLIM INDUCTOR-RoHS

文件：176.25 Kbytes 頁數(shù)：6 Pages

FENGJUI

峰瑞科技

絲?。?strong>821；SLIM INDUCTOR-RoHS

文件：176.25 Kbytes 頁數(shù)：6 Pages

FENGJUI

峰瑞科技