絲?。?strong>8205A；Package：SOT23-6；Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management

文件：2.45824 Mbytes 頁數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

絲印：8205A；Package：TSSOP8；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆Vgs+12V

文件：3.0646 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>8205A；Package：TSSOP-8；20V NN-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

文件：3.60546 Mbytes 頁數(shù)：6 Pages

YFWDIODE

佑風(fēng)微

20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

文件：3.05317 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

文件：532.97 Kbytes 頁數(shù)：7 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

文件：532.97 Kbytes 頁數(shù)：7 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

10V N-Channel Enhancement MOS FET

文件：295.04 Kbytes 頁數(shù)：4 Pages

FUMAN

富滿微

20V N 溝道增強型 MOS 場效應(yīng)管

FM

富滿微

MOS類溝槽型（Trench）和屏蔽柵溝槽（SGT）功率MOSFET產(chǎn)品，具有導(dǎo)通電阻低、開關(guān)特性優(yōu)、可靠性高等特點。產(chǎn)品廣泛應(yīng)用于電池管理系統(tǒng)、負載開關(guān)、通信、消費電子等各個領(lǐng)域

FM

富滿微

MOSFET管

PWCHIP

平芯微