2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER

GENERAL DESCRIPTION The MSM81C55-5 has a 2k-bit static RAM (256 bytes) with parallel I/O ports and a timer. It uses silicon gate CMOS technology and consumes a standby current of 100 micro ampere, maximum, while the chip is not selected. Featureing a maximum access time of 400 ns, the MSM81C

文件：156.91 Kbytes 頁(yè)數(shù)：19 Pages

OKIOki Electric Cable Co.,Ltd

沖電線日本沖電線株式會(huì)社

Radiation Hardened 256 x 8 CMOS RAM

The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Intersil radiation hardened Self Aligned Junction Isolated (SAJI) silicon gate technology. Latch-up free operation is achieved by the use of epitaxial starting material to eliminate the parasitic SCR effect seen in con

文件：86.12 Kbytes 頁(yè)數(shù)：14 Pages

INTERSIL

2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER

GENERAL? DESCRIPTION\nThe MSM81C55-5 has a 2k-bit static RAM (256 bytes) with parallel I/O ports and a timer.? It uses silicon gate CMOS technology and consumes a standby current of 100 micro ampere, maximum, while the chip is not selected.? Featureing a maximum access time of 400 ns, the MSM81C55-5 ? High speed and low power achieved with silicon gate CMOS technology\n? 256 words x 8bits RAM\n? Single power supply, 3 to 6 V\n? Completely static operation\n? On-chip address latch\n? 8-bit programmable I/O ports (port A and B)\n? TTL Compatible\n? RAM data hold characteristic at 2 V\n? 6-bit pro;

OKI

沖電線

Radiation Hardened 256 x 8 CMOS RAM

文件：113.07 Kbytes 頁(yè)數(shù)：11 Pages

INTERSIL

Radiation Hardened 256 x 8 CMOS RAM

The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Intersil radiation hardened Self Aligned Junction Isolated (SAJI) silicon gate technology. Latch-up free operation is achieved by the use of epitaxial starting material to eliminate the parasitic SCR effect seen in con

文件：86.12 Kbytes 頁(yè)數(shù)：14 Pages

INTERSIL