N-Channel 100-V (D-S) 175 ?C MOSFET

文件：974.83 Kbytes 頁數(shù)：7 Pages

VBSEMI

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TO252,N管，80A,100V,MOSFET

XFSEMI

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N-Channel 100-V (D-S) 175 ?C MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 175 °C Maximum Junction Temperature ? Compliant to RoHS Directive 2002/95/EC

文件：1.92016 Mbytes 頁數(shù)：7 Pages

VBSEMI

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N-Channel 100-V (D-S) MOSFET

文件：966.73 Kbytes 頁數(shù)：7 Pages

VBSEMI

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絲?。?a target="_blank" title="Marking" href="/80n100/marking.html">80N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =80A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 175 °C operating temperature Pb-free lead plating 100% UIS tested

文件：416.34 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/80n100/marking.html">80N100；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =100V,ID =80A RDS(ON)

文件：200.1 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/80n100/marking.html">80N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =80A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 175 °C operating temperature Pb-free lead plating 100% UIS tested

文件：276.1 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲印：80N10LF7；Package：H2PAK-2；Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET? F7 Power MOSFET in an H2PAK-2 package

Features ? AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET? F7 technology wi

文件：626.24 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

DFN-中低壓MOS

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