N-CHANNEL POWER MOSFET

Features ● RDS(ON)

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SUNMATE

森美特

650V N-Channel Enhancement Mode MOSFET

Description The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system mini

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EVVOSEMI

翊歐

N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

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UTC

友順

7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

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SILAN

士蘭微

7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：373.56 Kbytes 頁數(shù)：10 Pages

SILAN

士蘭微