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          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BC807-40-AU_R1_000A1

          絲?。?strong>7C;Package:SOT-23;Silicon PNP General Purpose Transistors

          Features ? Silicon PNP Epitaxial type ? Excellent DC current gain characteristics ? General purpose amplifier application ? AEC-Q101 qualified ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 Standard ? NPN complement: BC817-AU series

          文件:542.91 Kbytes 頁數(shù):6 Pages

          PANJIT

          強(qiáng)茂

          BC847BSH

          絲?。?strong>7C;Package:TSSOP6;45 V, 100 mA NPN/NPN general-purpose double transistor

          Features and benefits ? Low collector capacitance ? Low collector-emitter saturation voltage ? Closely matched current gain ? Reduces number of components and board space ? No mutual interference between the transistors ? High-temperature applications up to 175 °C

          文件:235.66 Kbytes 頁數(shù):10 Pages

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          BC847BSH-Q

          絲?。?strong>7C;Package:TSSOP6;45 V, 100 mA NPN/NPN general-purpose double transistor

          Features and benefits ? Low collector capacitance ? Low collector-emitter saturation voltage ? Closely matched current gain ? Reduces number of components and board space ? No mutual interference between the transistors ? High-temperature applications up to 175 °C ? Qualified according to A

          文件:236.83 Kbytes 頁數(shù):10 Pages

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          BZX38450-C5V1

          絲?。?strong>7C;Package:SOD323;Low-current voltage regulator diodes

          1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Total power dissipation: ≤ 300 mW ? Tolerance series: approximately ± 5 ? Working voltage range: nominal 1.8 V to 10 V ? Specifie

          文件:234.92 Kbytes 頁數(shù):10 Pages

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          BZX38450-C5V1-Q

          絲?。?strong>7C;Package:SOD323;Low-current voltage regulator diodes

          1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Total power dissipation: ≤ 300 mW ? Tolerance series: approximately ± 5 ? Working voltage range: nominal 1.8 V to 10 V ? Specifie

          文件:235.89 Kbytes 頁數(shù):10 Pages

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          BZX8850S-C6V8

          絲?。?strong>7C;Package:SOD882BD;Low-current voltage regulator diodes

          1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Total power dissipation: ≤ 365 mW ? Tolerance series: approximately ± 5 ? Workin

          文件:257.07 Kbytes 頁數(shù):11 Pages

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          BZX8850S-C6V8-Q

          絲?。?strong>7C;Package:DFN1006BD-2;Low-current voltage regulator diodes

          1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Total power dissipation: ≤ 365 mW ? Tolerance series: approximately ± 5 ? Workin

          文件:258.089 Kbytes 頁數(shù):11 Pages

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          MMBT2222A

          絲?。?strong>7C;Package:SOT23;NPN switching transistor

          FEATURES ? High current (max. 600 mA) ? Low voltage (max. 40 V). APPLICATIONS ? Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A.

          文件:344.2 Kbytes 頁數(shù):8 Pages

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          PDTA115EU

          絲?。?strong>7C;Package:SC-70;PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

          FEATURES ?Built-in bias resistors ?Simplified circuit design ?Reduction of component count ?Reduced pick and place costs. APPLICATIONS ?General purpose switching and amplification ?Inverter and interface circuits ?Circuit driver.

          文件:422.65 Kbytes 頁數(shù):15 Pages

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          PESD12VS2UAT

          絲印:7C;Package:SOT23;Double ESD protection diodes in SOT23 package

          FEATURES · Unidirectional ESD protection of up to two lines · Common-cathode configuration · Max. peak pulse power: Ppp = 330 W at tp = 8/20 ms · Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A · Ultra-low reverse leakage current: IRM 30 kV · IEC 61000-4-2; lev

          文件:241.54 Kbytes 頁數(shù):14 Pages

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          RCLAMP3371ZCTNTESD Suppressor Diode TVS Bi-Dir 3.3
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          更多7C供應(yīng)商 更新時(shí)間2026-1-18 8:31:00
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