20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t

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20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power\nMOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the ? Logic Level Gate Drive\n? 20A, 30V\n? Ultra Low On-Resistance, rDS(ON) = 0.052?\n? Temperature Compensating PSPICE? Model\n? Temperature Compensating SABER? Model\n? Thermal Impedance SPICE Model\n? Thermal Impedance SABER Model\n? Peak Current vs Pulse Width Curve\n? UIS Rating Curve\n? Related L;

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GRAYHILL

上傳：深圳市躍創(chuàng)芯科技有限公司

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GRAYHILL

上傳：深圳市躍創(chuàng)芯科技有限公司

N/A

GRAYHILL

上傳：深圳市躍創(chuàng)芯科技有限公司