絲印：75N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? One Channel of ESD Protection ? Low Channel Input Capacitance ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? For automotive applications

文件：498.37 Kbytes 頁(yè)數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：75N06SA；Package：TO-220AB-L；60V N-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@10V, ID@20A

文件：454.85 Kbytes 頁(yè)數(shù)：6 Pages

PANJIT

強(qiáng)茂

絲?。?a target="_blank" title="Marking" href="/75n60/marking.html">75N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =75A RDS(ON)

文件：581.06 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲?。?a target="_blank" title="Marking" href="/75n60/marking.html">75N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =75A RDS(ON)

文件：389.94 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲印：75N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features Vds =60V,Id =75A. Rds(on)

文件：563.97 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲?。?a target="_blank" title="Marking" href="/75nf20/marking.html">75NF20；Package：D2PAK；N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

文件：510.88 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/75nf20/marking.html">75NF20；Package：TO-220；N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

文件：510.88 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/75n60m6/marking.html">75N60M6；Package：TO-247；N-channel 600 V, 32 mΩ typ., 72 A, MDmesh? M6 Power MOSFET in a TO?247 package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Applications ? Switching applications ? LLC converters ? Boost PFC converters Description The new MDmesh? M6 technology incorporat

文件：539.39 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：75N60M6；Package：TO247-4；N-channel 600 V, 32 mΩ typ., 72 A, MDmesh? M6 Power MOSFET in a TO247-4 package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected ? Excellent switching performance thanks to the extra driving source pin Applications ? Switching applications ? LLC converters ? Boo

文件：513.77 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/75nf20/marking.html">75NF20；Package：TO-247；N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

文件：510.88 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體