| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
71124 | CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | |
71124 | 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no c JEDEC revolutionary pinout (center power/GND) forreduced noise.\nEqual access and cycle times– Commercial and Industrial: 12/15/20ns\nOne Chip Select plus one Output Enable pin\nBidirectional inputs and outputs directly TTL-compatible\nLow power consumption via chip deselect\nAvailable in a 32-pin 4; | Renesas 瑞薩 | Renesas | |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS |
技術參數(shù)
- Density (Kb)：
1024
- Bus Width (bits)：
8
- Core Voltage (V)：
5
- Pkg. Type：
SOJ
- Organization：
128K x 8
- I/O Voltage (V)：
5
- Access Time (ns)：
12
- Temp. Range：
-40 to 85°C
- Architecture：
Asynchronous
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IDT |
24+ |
SOJ |
100 |
詢價 | |||
IDT |
17+ |
SOJ |
9800 |
只做全新進口原裝,現(xiàn)貨庫存 |
詢價 | ||
IDT |
1999 |
SOJ |
100 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
TI |
23+ |
DIP |
80000 |
全新原裝假一賠十 |
詢價 | ||
IDT |
新 |
50 |
全新原裝 貨期兩周 |
詢價 | |||
IDT |
23+ |
NA |
10826 |
專做原裝正品,假一罰百! |
詢價 | ||
IDT |
2018+ |
26976 |
代理原裝現(xiàn)貨/特價熱賣! |
詢價 | |||
Integrated Device Technology ( |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
IDT, Integrated Device Technol |
24+ |
32-SOJ |
56200 |
一級代理/放心采購 |
詢價 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 |
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