CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

Ultrasonic Level Measurement Compact transmitters for non-contact level measurement of fluids, pastes and coarse bulk materials

Features and benefits ? Quick and simple commissioning via menu-guided onsite operation with four-line plain text display; 7 languages selectable ? Envelope curves on the on-site display for simple diagnosis ? Linearization function (up to 32 points) for conversion of the measured value int

文件：2.17712 Mbytes 頁(yè)數(shù)：28 Pages

EH

恩德斯

Simple Solution for Dynamically Programming the Output Voltage of DC-DC Converters

INTRODUCTION? Figure 1 shows a typical dc-to-dc converter configuration. As in many PWM controllers, the non-inverting input of the voltage feedback error amplifier is internally connected to the reference voltage, Vr. The output voltage of the converter is set by a resistor divider network

文件：77.32 Kbytes 頁(yè)數(shù)：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Common Mode EMI Chokes

Special Features ? Dual winding ? Low radiation ? High current capacity ? High inductance ? Dielectric strength 1000Vrms ? Mounted on VW-1 rated header ? Fixed pins for easy PCB insertion ? Operating temperature -55 to +105°C

文件：55.4 Kbytes 頁(yè)數(shù)：1 Pages

BOURNS

伯恩斯