絲?。?strong>6Y；Package：SC-76；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Total power dissipation: ≤ 300 mW ? Tolerance series: approximately ± 5 ? Working voltage range: nominal 1.8 V to 10 V ? Specifie

文件：234.92 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲?。?strong>6Y；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Total power dissipation: ≤ 300 mW ? Tolerance series: approximately ± 5 ? Working voltage range: nominal 1.8 V to 10 V ? Specifie

文件：235.89 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲?。?strong>6Y；Package：X2QFN；Low Voltage 5-Bit Self-Timed, Single-Wire Output Expander

1FEATURES ? Operating Power-Supply Voltage Range of 1.65 V to 3.6 V ? Five Independent Push-Pull Outputs ? Single Input (DIN) Controls State of All Outputs ? High-Current Drive Outputs Maximum Capability for Directly Driving LEDs ? Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

文件：1.0621 Mbytes 頁數(shù)：14 Pages

TI

德州儀器

絲?。?strong>6Y；Package：X2QFN；Low Voltage 5-Bit Self-Timed, Single-Wire Output Expander

1FEATURES ? Operating Power-Supply Voltage Range of 1.65 V to 3.6 V ? Five Independent Push-Pull Outputs ? Single Input (DIN) Controls State of All Outputs ? High-Current Drive Outputs Maximum Capability for Directly Driving LEDs ? Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

文件：1.0621 Mbytes 頁數(shù)：14 Pages

TI

德州儀器

絲?。?strong>6Y；Package：SOT-233L；P-Channel Switch

文件：341.77 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

絲印：6Y；Package：SOD-123FL；SURFACE MOUNT SILICON ZENER DIODES

文件：131.74 Kbytes 頁數(shù)：2 Pages

EIC

絲?。?a target="_blank" title="Marking" href="/6y1030p/marking.html">6Y1030P；Package：LFPAK56；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse

文件：259.959 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲印：6Y1440P；Package：LFPAK56；40 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse

文件：271.14 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/6y1930p/marking.html">6Y1930P；Package：LFPAK56；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse

文件：263.48 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲印：6Y2440P；Package：LFPAK56；40 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse

文件：260.89 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世