絲?。?strong>6N8；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：496.14 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：6N8；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.13 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>6N8；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：491.19 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?a target="_blank" title="Marking" href="/6n800/marking.html">6N800；Package：TO-252；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：1.16032 Mbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/6n800/marking.html">6N800；Package：TO-263；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：647.22 Kbytes 頁數(shù)：10 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/6n800/marking.html">6N800；Package：TO-251；N-Channel Super Junction Power MOSFET III

Features Now technology for high voltage device Low on-resistance and low conduction losses Smal package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：861.75 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/6n800/marking.html">6N800；Package：TO-252；N-Channel Super Junction Power MOSFET III

Features Now technology for high voltage device Low on-resistance and low conduction losses Smal package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：861.75 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/6n800/marking.html">6N800；Package：TO-220F；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：647.22 Kbytes 頁數(shù)：10 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/6n800/marking.html">6N800；Package：TO-220；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：647.22 Kbytes 頁數(shù)：10 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/6n8r2al/marking.html">6N8R2AL；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：72.94 Kbytes 頁數(shù)：6 Pages

A-POWER

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