絲?。?strong>6N100；Package：SOT-223-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID = 6A RDS(ON)

文件：399.7 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

絲?。?strong>6N100；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：73.99 Kbytes 頁數(shù)：6 Pages

A-POWER

富鼎先進電子

絲印：6N100；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：74.25 Kbytes 頁數(shù)：6 Pages

A-POWER

富鼎先進電子

絲?。?strong>6N100；Package：TO-251VS；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：72.64 Kbytes 頁數(shù)：6 Pages

A-POWER

富鼎先進電子

Power MOSFETs

Features ● RF capable MOSFETs ● Double metal process for low gate resistance ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier Applications ● DC-DC converters ● Switch

文件：820.74 Kbytes 頁數(shù)：4 Pages

IXYS

艾賽斯

6A, 1000V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 頁數(shù)：9 Pages

UTC

友順

6A, 1000V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 頁數(shù)：9 Pages

UTC

友順

6A, 1000V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 頁數(shù)：9 Pages

UTC

友順

6A, 1000V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 頁數(shù)：9 Pages

UTC

友順

6A, 1000V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 頁數(shù)：9 Pages

UTC

友順