Medium Performance Compact EMI Power Inlet Filter

文件：255.27 Kbytes 頁數(shù)：4 Pages

MACOM

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

Features ? Infineon Thin Film SOI technology ? Floating channel designed for bootstrap operation ? Fully operational to +1200 V ? Tolerant to negative transient voltage up to -100V (pulse widths up to 700ns) ? Gate drive supply range from 12 V to 20 V ? 25 V VCC voltage supply (maximum) ? 3

文件：825.61 Kbytes 頁數(shù)：22 Pages

INFINEON

英飛凌

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

Features ? Infineon Thin Film SOI technology ? Floating channel designed for bootstrap operation ? Fully operational to +1200 V ? Tolerant to negative transient voltage up to -100V (pulse widths up to 700ns) ? Gate drive supply range from 12 V to 20 V ? 25 V VCC voltage supply (maximum) ? 3

文件：825.61 Kbytes 頁數(shù)：22 Pages

INFINEON

英飛凌

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features ? Infineon Thin-Film-SOI technology ? Fully operational to +1200 V ? Optimized for IGBT (insulated gate bipolar transistor) / SiC(Silicon carbide) MOSFET ? Integrated Ultra‐fast Bootstrap Diode ? Floating channel designed for bootstrap operation ? Output source/sink current capabil

文件：1.53883 Mbytes 頁數(shù)：25 Pages

INFINEON

英飛凌

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features ? Infineon Thin-Film-SOI technology ? Fully operational to +1200 V ? Optimized for IGBT (insulated gate bipolar transistor) / SiC(Silicon carbide) MOSFET ? Integrated Ultra‐fast Bootstrap Diode ? Floating channel designed for bootstrap operation ? Output source/sink current capabil

文件：1.53883 Mbytes 頁數(shù)：25 Pages

INFINEON

英飛凌

160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes

Features ? Bootstrap voltage (VB node) of +160 V ? Floating channel designed for bootstrap operation ? Integrated power management unit (PMU) with; o Linear pre-regulator to enable wide input VIN range o Integrated charge pump for stable VCC ? Integrated current sense amplifier (CSA) with se

文件：2.07546 Mbytes 頁數(shù)：36 Pages

INFINEON

英飛凌

160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes

Features ? Bootstrap voltage (VB node) of +160 V ? Floating channel designed for bootstrap operation ? Integrated power management unit (PMU) with; o Linear pre-regulator to enable wide input VIN range o Integrated charge pump for stable VCC ? Integrated current sense amplifier (CSA) with se

文件：2.07546 Mbytes 頁數(shù)：36 Pages

INFINEON

英飛凌

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

文件：3.37502 Mbytes 頁數(shù)：29 Pages

INFINEON

英飛凌

1200 V、0.65 A 三相柵極驅動器，集成自舉二極管和過流保護，采用 DSO-24 封裝

EiceDRIVER ? 1200 V 三相柵極驅動器，采用 DSO-24 引線封裝，典型拉電流為 0.35 A，灌電流為 0.65 A。這款采用我們的 SOI 技術的高壓、高速驅動器具有三個獨立的高端和低端參考輸出通道，并集成了過流保護等保護功能，具有快速準確的故障報告、直通保護和欠壓鎖定保護。 ? 1200-V 薄膜 SOI 技術\n ? 集成。超快速自舉二極管\n ? 可耐受負電壓。瞬態(tài)電壓。\n? 輸出拉/灌電流 +0.35 A/-0.65 A\n ? 過流保護\n ? 集成死區(qū)保護\n ? 直通保護\n ? 集成輸入濾波器\n ? 獨立欠壓鎖定\n ? 多種故障功能\n ? 匹配的道具。延遲所有通道。\n? 3.3，5、& 15 V 輸入邏輯兼容。;

Infineon

英飛凌

適用于 IGBT/SiC 模塊和分立器件的 1200 V 三相柵極驅動器，帶有集成自舉二極管、過流保護和更嚴格的 UVLO 保護

\n優(yōu)勢:\n? 3 Phase gate drive with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design\n? Optimized gate driver solution with design flexibility for IGBT/SiC based PIM, discrete switch\n? 100 V negative VS increased reliability /;

Infineon

英飛凌