絲印：6BC；Package：DO221-AC；600 W TVS in SMA Flat

Features ? Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) ? Flat and thin package: 1 mm ? Stand-off voltage range from 5 V to 188 V ? Unidirectional type ? Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C ? Operating Tj max: 175 °C ? High power capability at Tj max.: up to 40

文件：663.52 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/6bct125a/marking.html">6BCT125A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power-Up and Power-Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C Method 3015 Package Options Include Plastic Small-Outline (D) Pac

文件：408.28 Kbytes 頁數(shù)：10 Pages

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德州儀器

絲?。?a target="_blank" title="Marking" href="/6bct125a/marking.html">6BCT125A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power-Up and Power-Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C Method 3015 Package Options Include Plastic Small-Outline (D) Pac

文件：408.28 Kbytes 頁數(shù)：10 Pages

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德州儀器

絲?。?a target="_blank" title="Marking" href="/6bct126a/marking.html">6BCT126A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883 Method 3015 High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (D) and

文件：354.76 Kbytes 頁數(shù)：10 Pages

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德州儀器

絲?。?a target="_blank" title="Marking" href="/6bct126a/marking.html">6BCT126A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883 Method 3015 High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (D) and

文件：354.76 Kbytes 頁數(shù)：10 Pages

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德州儀器

絲?。?a target="_blank" title="Marking" href="/6bct244/marking.html">6BCT244；Package：SOIC；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers P-N-P Inputs Reduce DC Loading High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic

文件：465.22 Kbytes 頁數(shù)：9 Pages

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德州儀器

絲?。?a target="_blank" title="Marking" href="/6bct244/marking.html">6BCT244；Package：SOIC；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers P-N-P Inputs Reduce DC Loading High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic

文件：465.22 Kbytes 頁數(shù)：9 Pages

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德州儀器

絲?。?a target="_blank" title="Marking" href="/6bct245/marking.html">6BCT245；Package：SOIC；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

BiCMOS Design Significantly Reduces ICCZ 3-State True Outputs Drive Bus Lines Directly High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic 300-mil D

文件：477.52 Kbytes 頁數(shù)：10 Pages

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德州儀器

絲?。?a target="_blank" title="Marking" href="/6bct245/marking.html">6BCT245；Package：SOIC；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

BiCMOS Design Significantly Reduces ICCZ 3-State True Outputs Drive Bus Lines Directly High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic 300-mil D

文件：477.52 Kbytes 頁數(shù)：10 Pages

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德州儀器

絲?。?a target="_blank" title="Marking" href="/6bct25244/marking.html">6BCT25244；Package：SOIC；25-ohm OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed to Facilitate Incident-Wave Switching for Line Impedanc

文件：200.02 Kbytes 頁數(shù)：8 Pages

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