絲?。?a target="_blank" title="Marking" href="/6706/marking.html">6706；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description The 6706AA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.37009 Mbytes 頁數(shù)：10 Pages

GOFORD

谷峰半導(dǎo)體

High Current Toroid Inductors (with header)

Special Features ? Low radiation ? High current capacity ? High inductance ? Mounted on UL 94V-0 rated header ? Fixed pins for easy PCB insertion ? Operating temperature: -55 to +105 °C

文件：94.1 Kbytes 頁數(shù)：1 Pages

BOURNS

伯恩斯

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6706 is Pb-free (meets ROHS

文件：164.99 Kbytes 頁數(shù)：4 Pages

AOSMD

萬國半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6706 is Pb-free (meets ROHS

文件：164.99 Kbytes 頁數(shù)：4 Pages

AOSMD

萬國半導(dǎo)體