絲印：63；Package：SC-70；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? High switching speed ? Low leakage current ? High breakdown voltage ? Low capacitance ? AEC-Q101 qualified 3. Applications ? Ultra high-spe

文件：188.34 Kbytes 頁數(shù)：8 Pages

NEXPERIA

安世

絲?。?strong>63；Package：SC-70；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? High switching speed ? Low leakage current ? High breakdown voltage ? Low capacitance ? AEC-Q101 qualified 3. Applications ? Ultra high-spe

文件：189.3 Kbytes 頁數(shù)：8 Pages

NEXPERIA

安世

絲?。?strong>63；Package：SOT-143；Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)

Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies

文件：114.2 Kbytes 頁數(shù)：3 Pages

SIEMENS

西門子

絲?。?strong>63；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲印：63；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 頁數(shù)：9 Pages

ROHM

羅姆

絲?。?strong>63；Package：SOT-26；Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection

文件：41.48 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導體

絲印：63；Package：SOT-26；Transient Voltage Suppressors

文件：179.9 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/630/marking.html">630；Package：TO-220C；9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

文件：1.35377 Mbytes 頁數(shù)：11 Pages

WXDH

東海半導體

絲?。?a target="_blank" title="Marking" href="/630a/marking.html">630A；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The 630AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：994.61 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/63/marking.html">63*；Package：SOT-323；Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT323 very small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES ? Low forward voltage ? Guard ring protected ? Very small SMD package ? Low diode capacitance. APPLICATIONS ? U

文件：52.5 Kbytes 頁數(shù)：8 Pages

PHI

PHI