絲?。?a target="_blank" title="Marking" href="/600n253s/marking.html">600N253S；Package：PG-TO220；OptiMOSTM 3 Power-Transistor, 250 V

Features ? Ideal for high frequency switching and sync. rec. ? Excellent gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? N-channel, normal level ? 100 avalanche tested ? Pb-free plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.09635 Mbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/600n65e1/marking.html">600N65E1；Package：TO-252AA；650V N-Channel Super Junction MOSFET

Feature: ? RDS(ON) Max, VGS@10V: 600mΩ ? Easy to use/ drive ? High Speed Switching and Low RDS(ON) ? 100 Avalanche Tested ? 100 Rg Tested ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard Mechanical Data ? Case: TO-252AA package ? Terminals: So

文件：637.98 Kbytes 頁數(shù)：7 Pages

PANJIT

強(qiáng)茂

絲?。?a target="_blank" title="Marking" href="/600n65e1/marking.html">600N65E1；Package：ITO-220AB-F；650V N-Channel Super Junction MOSFET

Feature: ? RDS(ON) Max, VGS@10V: 600mΩ ? Easy to use/ drive ? High Speed Switching and Low RDS(ON) ? 100 Avalanche Tested ? 100 Rg Tested ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard Mechanical Data ? Case: ITO-220AB-F package ? Terminals:

文件：657.95 Kbytes 頁數(shù)：7 Pages

PANJIT

強(qiáng)茂