PLUGS AND JACKS

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ETCList of Unclassifed Manufacturers

未分類制造商

TEST TIPS AND PLUGS

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ETCList of Unclassifed Manufacturers

未分類制造商

3M??Reusable Respirators

文件：1.36445 Mbytes 頁數(shù)：8 Pages

3M

絲?。?strong>6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench technolo gy to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. DMN6075SQ General Features VDS = 60V ID =3A RDS(ON)

文件：1.92812 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?strong>6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench techno logy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Thi s device is suitable for use as a Battery protection or in other Switching application. NVR5198NL General Features VDS = 60V ID =3A RDS(ON)

文件：1.9281 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲印：6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench techno logy to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. PMV37ENEA General Features VDS = 60V ID =3A RDS(ON)

文件：1.92811 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?strong>6003；Package：SOT23-3L；N -Channel Enhancement Mode Power MOSFET

Features BV > 60 V Ptot

文件：176.32 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲?。?strong>6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The SQ2308CES uses advanced trench technolo gy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Thi s device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =3A RDS(ON)

文件：1.92812 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?strong>6003；Package：SOT-23-3L；LCE N-Channel Enhancement Mode Power MOSFET

文件：774.51 Kbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

絲?。?strong>6003；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：1.13374 Mbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子