絲?。?strong>5N50；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features Vds =500 Id =5A Rds(on)

文件：506.96 Kbytes 頁數(shù)：5 Pages

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絲?。?strong>5N50；Package：TO-220F；N-Channel Power MOSFET

General Features VDS =500V,ID =5A RDS(ON)

文件：438.49 Kbytes 頁數(shù)：5 Pages

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絲?。?a target="_blank" title="Marking" href="/5n500/marking.html">5N500；Package：TO-251；N-Channel Enhancement Mode Power MOSFET

General Features VDS =500V,ID =5A RDS(ON)

文件：257.61 Kbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/5n50at/marking.html">5N50AT；Package：TO-220AB；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/5n50af/marking.html">5N50AF；Package：TO-220F；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/5n50as/marking.html">5N50AS；Package：TO-263；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/5n50as/marking.html">5N50AS；Package：TO-263；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 頁數(shù)：7 Pages

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絲印：5N50AMJ；Package：TO-251；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/5n50ad/marking.html">5N50AD；Package：TO-252；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 頁數(shù)：7 Pages

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N-Channel 650V (D-S) Power MOSFET

FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correcti

文件：1.19767 Mbytes 頁數(shù)：10 Pages

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