絲?。?strong>5N；Package：SOD523；Zener Diode

Features ● High reliability ● Very sharp reverse characteristic ● Low reverse current level ● Zener Voltage 2.4V~47V

文件：2.67073 Mbytes 頁數(shù)：5 Pages

SAMYANG

三陽電子

絲?。?strong>5N；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Total power dissipation: ≤ 365 mW ? Tolerance series: approximately ± 5 ? Workin

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絲印：5N；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Total power dissipation: ≤ 365 mW ? Tolerance series: approximately ± 5 ? Workin

文件：258.089 Kbytes 頁數(shù)：11 Pages

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絲印：5N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? One Channel of ESD Protection ? Low Channel Input Capacitance ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? For automotive applications

文件：498.37 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導(dǎo)體

絲印：5N；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features ? Total power dissipation: max. 500 mW ? Small plastic package suitable for surface mounted design ? Tolerance approximately ± 5

文件：272.29 Kbytes 頁數(shù)：4 Pages

SEMTECH_ELEC

先之科半導(dǎo)體

絲?。?strong>5N；Silicon Planar Zener Diodes

FEATURES ? Total power dissipation: Max. 500mW. ? Wide zener reverse voltage range 2.0V to 75V. ? Small plastic package suitable for surface mounted design. ? Tolerance approximately±5

文件：776.59 Kbytes 頁數(shù)：2 Pages

JUXING

廣東鉅興電子

絲?。?strong>5N；Package：SC-70；80 V, 100 mA NPN resistor-equipped transistors

1. General description NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA PNP complement: NHDTC123JU 2.2 47 NHDTA123JU NHDTC143ZU 4.7 47 NHDTA143

文件：299.38 Kbytes 頁數(shù)：15 Pages

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絲?。?strong>5N；Package：SC-70；80 V, 100 mA NPN resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? High breakdown voltage ? Built-in resistors ? Simplifies circuit design ? Reduces component count ? Reduces pick and place costs ? Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：309.61 Kbytes 頁數(shù)：15 Pages

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絲?。?strong>5N；Package：SOT23；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology 3. Applications ?

文件：281.09 Kbytes 頁數(shù)：12 Pages

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絲印：5N；Package：SC-62；100 V, 3.7 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：329.43 Kbytes 頁數(shù)：16 Pages

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