絲印：5G；Package：SOT353-1；Low-power inverter with voltage-level translator

1. General description The 74AUP1T04 provides a single inverting function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T04 is designed for logic-level translation applications with input switching levels that ac

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絲?。?strong>5G；Package：SOT1226-3；Low-power inverter with voltage-level translator

1. General description The 74AUP1T04 provides a single inverting function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T04 is designed for logic-level translation applications with input switching levels that ac

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絲?。?strong>5G；Package：SOT-23；Small Signal Transistors (PNP)

Features ? PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. ? Especially suited for automatic insertion in thick and thin-film circuits. ? These transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. ? As c

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絲?。?strong>5G；Package：DFN2020MD-6；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Extended temperature range Tj = 175 °C ? Side wettable flanks for o

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絲?。?strong>5G；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

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絲?。?strong>5G；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

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絲印：5G；Package：SC-70；80 V, 100 mA PNP resistor-equipped transistors

1. General description PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA NPN complement: NHDTA123JU 2.2 47 NHDTC123JU NHDTA143ZU 4.7 47 NHDTC143

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絲印：5G；Package：SOT323；80 V, 100 mA PNP resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? High breakdown voltage ? Built-in resistors ? Simplifies circuit design ? Reduces component count ? Reduces pick and place costs ? AEC-Q101 qualified

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絲印：5G；Package：SC-62；100 V, 4.5 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

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絲印：5G；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

文件：339.95 Kbytes 頁數(shù)：10 Pages

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