絲印：596；Package：SOT-23；PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT 23 PNP silicon planar high voltage transistor

文件：125.58 Kbytes 頁數(shù)：2 Pages

ZETEX

絲?。?a target="_blank" title="Marking" href="/5962-0050901qfa/marking.html">5962-0050901QFA；Package：CFP；SNx4LVC257A Quadruple 2-Line to 1-Line Data Selectors and Multiplexers With 3-State Outputs

1 Features ? Operate from 1.65V to 3.6V ? Inputs accept voltages to 5.5V ? Maximum tpd of 4.6ns at 3.3V ? Typical VOLP (output ground bounce) 2V at VCC = 3.3V, TA = 25°C ? Latch-up performance exceeds 250mA per JESD 17

文件：2.42227 Mbytes 頁數(shù)：40 Pages

TI

德州儀器

絲印：5962-0051001QXA；Package：CFCBGA；SMJ320C6203 Fixed-Point Digital Signal Processor

1 Features 1? High-Performance Fixed-Point Digital Signal Processor (DSP) SMJ320C62x? – 5-ns Instruction Cycle Time – 200-MHz Clock Rate – Eight 32-Bit Instructions/Cycle – 1600 Million Instructions per Second (MIPS) ? 429-Pin Ball Grid Array (BGA) Package (GLP Suffix) ? VelociTI? Advance

文件：943.89 Kbytes 頁數(shù)：74 Pages

TI

德州儀器

絲印：5962-0051301QCA；Package：CDIP；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 頁數(shù)：17 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/5962/marking.html">5962；Package：CFP；ADC14155QML-SP, radiation hardened, 14-Bit, 155-MSPS, 1.1-GHz bandwidth A/D

1 Features 1? 5962R0626201VXC – Total Ionizing Dose (TID) 100 krad(Si) – Single Event Latch-up 120 MeV-cm2/mg (See Radiation Reports) ? 1.1-GHz Full-Power Bandwidth ? Internal Sample-and-Hold Circuit ? Low-Power Consumption ? Internal Precision 1-V Reference ? Single-Ended or Differential

文件：899.94 Kbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/5962/marking.html">5962；Package：CFP；ADC14155QML-SP, radiation hardened, 14-Bit, 155-MSPS, 1.1-GHz bandwidth A/D

1 Features 1? 5962R0626201VXC – Total Ionizing Dose (TID) 100 krad(Si) – Single Event Latch-up 120 MeV-cm2/mg (See Radiation Reports) ? 1.1-GHz Full-Power Bandwidth ? Internal Sample-and-Hold Circuit ? Low-Power Consumption ? Internal Precision 1-V Reference ? Single-Ended or Differential

文件：899.94 Kbytes 頁數(shù)：36 Pages

TI

德州儀器

絲印：5962；Package：CFP；LM98640QML-SP Radiation Hardness Assured (RHA), Dual Channel, 14-Bit, 40-MSPS Analog Front End With LVDS Output

1 Features 1? Radiation Hardened – TID 100 krad(Si) – Single Event Latch-Up (SEL) Immune to LET = 120 MeV-cm2/mg – Single Event Functional Interrupt (SEFI) Free to 120 MeV-cm2/mg – SMD 5962R1820301VXC ? ADC Resolution: 14-Bit ? ADC Sampling Rate: 5 MSPS to 40 MSPS ? Input Level: 2.85 V

文件：642.16 Kbytes 頁數(shù)：55 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/5962/marking.html">5962；Package：CFP；LM98640QML-SP Radiation Hardness Assured (RHA), Dual Channel, 14-Bit, 40-MSPS Analog Front End With LVDS Output

1 Features 1? Radiation Hardened – TID 100 krad(Si) – Single Event Latch-Up (SEL) Immune to LET = 120 MeV-cm2/mg – Single Event Functional Interrupt (SEFI) Free to 120 MeV-cm2/mg – SMD 5962R1820301VXC ? ADC Resolution: 14-Bit ? ADC Sampling Rate: 5 MSPS to 40 MSPS ? Input Level: 2.85 V

文件：642.16 Kbytes 頁數(shù)：55 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/5962-0051301qca/marking.html">5962-0051301QCA；Package：CDIP；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 頁數(shù)：17 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/5962-0051301qca/marking.html">5962-0051301QCA；Package：CDIP；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 頁數(shù)：17 Pages

TI

德州儀器