絲?。?strong>56N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.17 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：56N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：493.04 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>56N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：487.47 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>56N；Package：6-PinSOT23；Stable 6MHz, 500關A, RRIO, Precision, Op Amps

文件：1.74341 Mbytes 頁數(shù)：19 Pages

3PEAK

思瑞浦

絲?。?a target="_blank" title="Marking" href="/56n04/marking.html">56N04；Package：TO-252；N-Ch Enhancement Mode Power MOSFET

文件：320.94 Kbytes 頁數(shù)：4 Pages

SECOS

喜可士

絲?。?a target="_blank" title="Marking" href="/56n60dm2/marking.html">56N60DM2；Package：TO-247；N-channel 600 V, 0.052 廓 typ., 50 A MDmesh??DM2 Power MOSFET in a TO-247 package

文件：405.7 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導體

絲印：56N65DM2；Package：TO-247；N-channel 650 V, 0.058 廓 typ., 48 A MDmesh??DM2 Power MOSFET in a TO-247 package

文件：719.39 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導體

N-channel 30 V, 0.0076 typ., 15 A STripFET V Power MOSFET in a PowerFLAT 5x6 package

文件：910.45 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導體

Diode - Diode Module

文件：121.07 Kbytes 頁數(shù)：2 Pages

NAINA

High Performance SMT Key Switches

文件：200.6 Kbytes 頁數(shù)：3 Pages

CK-COMPONENTS

力特