絲?。?strong>560；WE-LQS SMT Semi-Shielded Power Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：671.09 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>560；WE-LQS SMT Semi-Shielded Power Inductor

General Information: Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：658.62 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>560；WE-TI Radial Leaded Wire Wound Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (refering to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：663.22 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>560；WE-LHCA SMT High Current Inductor

General Information: Ambient Temperature (referring to IRP) -55 °C up to +115 °C Operating Temperature -55 °C up to +155 °C Storage Conditions (in original packaging)

文件：824.25 Kbytes 頁數(shù)：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：560；WE-LHCA SMT High Current Inductor

General Information: Ambient Temperature (referring to IRP) -55 °C up to +115 °C Operating Temperature -55 °C up to +155 °C Storage Conditions (in original packaging)

文件：804.83 Kbytes 頁數(shù)：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：560；Package：SOT23；500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Features BVCEO > -500V IC = -150mA high Continuous Collector Current ICM Up to -500mA Peak Pulse Current Excellent hFE Characteristics up to IC = -100mA Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The FMMT560Q is suitable for aut

文件：569.75 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲印：560；Package：SOT23；500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Features BVCEO > -500V IC = -150mA high Continuous Collector Current ICM Up to -500mA Peak Pulse Current Excellent hFE Characteristics up to IC = -100mA Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The FMMT560Q is suitable for aut

文件：569.75 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>560；Package：SSOT-3L；PN Low-Saturation Transistor

Features ? These devices are designed with high-current gain and low-saturation voltage with collector currents up to 2 A continuous.

文件：506.55 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

絲印：560；This specification applies to SMD Shielded Power Choke

文件：635.21 Kbytes 頁數(shù)：7 Pages

LEIDITECH

雷卯電子

絲?。?strong>560；This specification applies to SMD Shielded Power Choke

文件：654.24 Kbytes 頁數(shù)：10 Pages

LEIDITECH

雷卯電子