絲?。?strong>50S；Package：11-2E2；Photocouplers Photorelay

Features (1) Normally opened (1-Form-A) (2) OFF-state output terminal voltage: 20 V (min) (3) Trigger LED current: 3 mA (max) (4) ON-state current: 160 mA (max) (5) ON-state resistance: 6.8 Ω (typ.), 8.5 Ω (max) (6) Output capacitance: 0.6 pF(typ.), 0.9 pF(max) (7) Isolation voltage: 500 Vr

文件：356.76 Kbytes 頁數(shù)：11 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/50s500ce/marking.html">50S500CE；Package：PG-TO220；500V CoolMOS? CE Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications

文件：1.20083 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/50s380ce/marking.html">50S380CE；Package：PG-TO252；500V CoolMOS? CE Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications

文件：1.21373 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/50s950/marking.html">50S950；Package：PG-SOT223；500V CoolMOS? CE Power Transistor

500V CoolMOSa CE Power Transistor Features ? Extremely low losses due to very low FOM Rdson*Qg and Eos ? Very high commutation ruggedness ? Easy to use/drive ? Pb-free plating, Halogen free mold compound ? Qualified for standard grade applications Applications ? ?Adapter, Charger and Light

文件：1.29932 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/50s3k0/marking.html">50S3K0；Package：PG-SOT223；500V CoolMOS? CE Power Transistor

文件：1.31664 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/50s800/marking.html">50S800；Package：PG-SOT223；500V CoolMOS? CE Power Transistor

文件：1.29551 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

Schottky Rectifiers

Schottky Rectifiers

文件：59.28 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Schottky Rectifiers

Schottky Rectifiers

文件：59.28 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

SDRAM(512K X 2 BANKS X 16 BITS SDRAM)

GENERAL DESCRIPTION 50S116T is a high-speed synchronous dynamic random access memory (SDRAM), organized as 512K words ′ 2 banks ′ 16 bits. Using pipelined architecture 50S116T delivers a data bandwidth of up to 400M bytes per second (-5). For different applications the 50S116T is sorted into the

文件：1.29515 Mbytes 頁數(shù)：22 Pages

CERAMATECeramate Technical

臺基防雷臺基防雷科技股份有限公司

Schottky Rectifiers

文件：59.28 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司