絲印：50P；Package：SOT-23；PRECISION 5.0 VOLT LOW KNEE CURRENT VOLTAGE REFERENCE

DEVICE DESCRIPTION The ZRC500 uses a bandgap circuit design to achieve a precision micropower voltage reference of 5.0 volts. The device is available in small outline surface mount packages, ideal for applications where space saving is important, as well as packages for through hole requirements.

文件：72.23 Kbytes 頁數(shù)：5 Pages

ZETEX

絲?。?a target="_blank" title="Marking" href="/50p30/marking.html">50P30；Package：DFN3X3；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-30V,ID =-50A RDS(ON)

文件：264.59 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/50p40/marking.html">50P40；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-40V,ID =-52A RDS(ON)

文件：518.76 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/50p60/marking.html">50P60；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-60V,ID =-50A RDS(ON)

文件：277.03 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/50p04/marking.html">50P04；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features Vos=-40V ID=-50 A ROS(ON)

文件：3.19134 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/50p06/marking.html">50P06；Package：TO-252；-60V P-Channel MOSFET

PRODUCT SUMMARY VDS (V) = -60V RDS(ON)

文件：304.68 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

絲印：50P06；Package：TO-252；-60V P-Channel MOSFET

APPLICATIONS Load Switch

文件：441.73 Kbytes 頁數(shù)：5 Pages

UMW

友臺半導(dǎo)體

絲印：50P06-15；Package：TO-252-3L；P-Channel 60-V (D-S) MOSFET

FEATURES RDS(ON) 14mQ@VGs=-10V (Typ) RDs(ON) 16mQ@VaGs=-4.5V(Typ) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：2.72235 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲印：50PQ；Package：SOT-23；TPS382x-xx-Q1 Voltage Monitor With Watchdog Timer

1 Features ? Qualified for automotive applications ? AEC-Q100 Qualified With the Following Results: – Device temperature grade 1: –40°C to 125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B ? ESD protection exceeds 2000V Per MIL-STD-883, Method 3015; usi

文件：986.85 Kbytes 頁數(shù)：24 Pages

TI

德州儀器

絲印：50PQ；Package：SOT-23；TPS382x-xx-Q1 Voltage Monitor With Watchdog Timer

1 Features ? Qualified for automotive applications ? AEC-Q100 Qualified With the Following Results: – Device temperature grade 1: –40°C to 125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B ? ESD protection exceeds 2000V Per MIL-STD-883, Method 3015; usi

文件：986.85 Kbytes 頁數(shù)：24 Pages

TI

德州儀器