1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 頁數(shù)：11 Pages

OSRAM

艾邁斯歐司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 頁數(shù)：11 Pages

OSRAM

艾邁斯歐司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 頁數(shù)：11 Pages

OSRAM

艾邁斯歐司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 頁數(shù)：11 Pages

OSRAM

艾邁斯歐司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 頁數(shù)：11 Pages

OSRAM

艾邁斯歐司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 頁數(shù)：11 Pages

OSRAM

艾邁斯歐司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 頁數(shù)：11 Pages

OSRAM

艾邁斯歐司朗

2.0mm Pitch Battery Male Conn. T/H S/R R/A Type

Voltage: 30 Volts AC DC (per pin)\n\nCurrent: 5 Amperes (per pin) \n\nContact Resistance: 20 mΩ max. \n\nDielectric Withstanding Voltage: 500V AC Min. \n\nInsulation Resistance: 1000MΩ min. \n\nOperating Temp. : -40℃ ~ +85℃ ? Family: Blade Male\n? Pitch(mm): 2.00\n? PCB Mounting: T/H\n? Operation Direction: R/A Sink\n? AbovePCBHeight (mm): 1.70\n? MatesWith: 50967, 50974\n? Current(A): 5.0\n? Screw (Yes/No): No\n? Circuits: 5, 6;

ACES

宏致電子

2.0mm Pitch Battery Conn Male DIP R/A H=4.2mm

Voltage: 30 Volts AC (per pin) \n\nCurrent: 5.0Amperes (per pin) \n\nContact Resistance:40mΩ max. \n\nDielectric Withstanding Voltage: 500 VAC Min. \n\nInsulation Resistance: 500MΩ min. \n\nOperating Temp. : -40℃ ~ +85℃ ? Family: Blade Male\n? Pitch(mm): 2.00\n? PCB Mounting: T/H\n? Operation Direction: R/A Sink\n? AbovePCBHeight (mm): 4.20\n? Current(A): 5.0\n? Screw (Yes/No): No\n? Circuits: 5;

ACES

宏致電子

包裝：散裝 類別：風(fēng)扇，熱管理 風(fēng)扇 - 護(hù)手板，濾波器和套管 描述：GRILL GUARD 254 MM FOR M4Q SER

ebm-papst Inc.