N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

文件：228.68 Kbytes 頁數(shù)：6 Pages

UTC

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絲?。?a target="_blank" title="Marking" href="/4n80k5/marking.html">4N80K5；Package：DPAK；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/4n80k5/marking.html">4N80K5；Package：TO-220FP；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/4n80k5/marking.html">4N80K5；Package：TO-220；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/4n80k5/marking.html">4N80K5；Package：IPAK；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

4.0A, 800V N-CHANNEL POWER MOSFET

The UTC 4N80-N is a N-channel mode power MOSFET usingUTC’s advanced technology to provide costomers planar stripe andDMOS technology. This technology is specialized in allowing aminimum on-state resistance, and superior switching performance. Italso can withstand high energy pulse in the avalanche a ? RDS(on)<3.0Ω @VGS =10V\n? Improved dv/dt capability\n? 100% avalanche tested;

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高壓MOSFET

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