絲印：4H3L40；Package：SOT1210；N-channel 40 V, 4.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 95 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits ? Avala

文件：304.65 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/4h3s40/marking.html">4H3S40；Package：SOT1210；N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 95 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits ? Av

文件：303.75 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

Silicon Power Rectifiers

文件：1.03081 Mbytes 頁數(shù)：2 Pages

EDAL

Silicon Power Rectifiers

Edal Series F power rectifiers are stud mounted DO-5 packages. Because the silicon junction is carefully fitted within a glass-to-metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions. The series F power rectifiers

文件：839.3 Kbytes 頁數(shù)：2 Pages

EDAL

Plug-in Signal Conditioners M-UNIT

文件：157.57 Kbytes 頁數(shù)：5 Pages

MSYSTEM

愛模