絲印：4C；Package：X2-DFN1210-8；DUAL BIT DUAL POWER SUPPLY TRANSLATING TRANSCEIVER WITH 3 STATE OUTPUTS

Features ? Wide Supply Voltage Range: ? VCC(A): from 1.2V to 5.5V ? VCC(B): from 1.2V to 5.5V ? ± 24mA Output Drive at 3.3V ? CMOS Low Power Consumption 16μA Maximum ICC ? High Noise Immunity ? IOFF Supports Partial-Power-Down Mode Operation ? IOFF Controlled by Either VCC Being at 0V ? I

文件：842.55 Kbytes 頁(yè)數(shù)：16 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：4C；Package：SOT23；PNP general purpose transistors

FEATURES ?Low current (max. 100 mA) ?Low voltage (max. 45 V).

文件：355.55 Kbytes 頁(yè)數(shù)：9 Pages

NEXPERIA

安世

絲?。?strong>4C；Package：SOT-23；General Purpose Transistors

General Purpose Transistors PNP Silicon ? Moisture Sensitivity Level: 1 ? ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V ? We declare that the material of product compliance with RoHS requirements.

文件：179.58 Kbytes 頁(yè)數(shù)：8 Pages

FS

絲?。?strong>4C；Package：SOT-23；General Purpose Transistors

General Purpose Transistors PNP Silicon ? Moisture Sensitivity Level: 1 ? ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V ? We declare that the material of product compliance with RoHS requirements.

文件：179.58 Kbytes 頁(yè)數(shù)：8 Pages

FS

絲?。?strong>4C；Package：SOT323；PNP general purpose transistors

FEATURES ?Low current (max. 100 mA) ?Low voltage (max. 45 V).

文件：330.54 Kbytes 頁(yè)數(shù)：8 Pages

NEXPERIA

安世

絲?。?strong>4C；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Extended temperature range Tj = 175 ℃ ? Side wettable flanks for op

文件：317.95 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIA

安世

絲?。?strong>4C；Package：SOT-23；SILICON PLANAR VARIABLE CAPACITANCE DIODE

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE

文件：35.61 Kbytes 頁(yè)數(shù)：1 Pages

ZETEX

絲?。?strong>4C；Silicon Planar Zener Diodes

FEATURES ? Total power dissipation: Max. 500mW. ? Wide zener reverse voltage range 2.0V to 75V. ? Small plastic package suitable for surface mounted design. ? Tolerance approximately±5

文件：776.59 Kbytes 頁(yè)數(shù)：2 Pages

JUXING

廣東鉅興電子

絲?。?strong>4C；Package：SC-62；100 V, 1 A PNP low VCEsat (BISS) transistor

Features * SOT89 package * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to less heat generation

文件：321.85 Kbytes 頁(yè)數(shù)：16 Pages

NEXPERIA

安世

絲印：4C；Package：SOT-89；TL431, TL432 Precision Programmable Reference

1 Features ? Reference voltage tolerance at 25°C – 0.5 (B grade) – 1 (A grade) – 2 (Standard grade) ? Adjustable output voltage: Vref to 36 V ? Operation from ?40°C to 125°C ? Typical temperature drift (TL43xB) – 6 mV (C temp) – 14 mV (I temp, Q temp) ? Low Output Noise ? 0.2-Ω Typical

文件：3.08309 Mbytes 頁(yè)數(shù)：83 Pages

TI

德州儀器