絲印：491；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ? Low saturation. ? Complementary To FMMT591. ? Excellent HFE Linearity. APPLICATIONS ? Switching appilication.

文件：301.86 Kbytes 頁(yè)數(shù)：4 Pages

BILIN

銀河微電

絲印：491；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation. ● Complementary To FMMT591. ● Excellent HFE Linearity. APPLICATIONS ● Switching appilication.

文件：1.20531 Mbytes 頁(yè)數(shù)：2 Pages

LUGUANG

魯光電子

絲印：491；Package：SOT-23；Plastic-Encapsulate Transistors

FEATURES Low equivalent on-resistance

文件：758.77 Kbytes 頁(yè)數(shù)：3 Pages

GWSEMI

唯圣電子

絲印：491；Package：SOT-23；NPN Transistor

Features ● Low equivalent on-resistance ● Be complementaty with FMMT591

文件：1.53232 Mbytes 頁(yè)數(shù)：4 Pages

PJSEMI

平晶半導(dǎo)體

絲?。?strong>491；Package：SOT-23；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Low equivalent on-resistance

文件：493.11 Kbytes 頁(yè)數(shù)：3 Pages

FS

絲?。?strong>491；Package：SOT-23；NPN Transistor

Features ● Low equivalent on-resistance

文件：1.24598 Mbytes 頁(yè)數(shù)：4 Pages

PJSEMI

平晶半導(dǎo)體

絲?。?strong>491；Package：SOT-23；TRANSISTOR (NPN)

文件：497.15 Kbytes 頁(yè)數(shù)：5 Pages

RECTRON

麗正國(guó)際

絲印：4912；Package：SOP-8；Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

文件：2.39101 Mbytes 頁(yè)數(shù)：7 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/4914/marking.html">4914；Package：SOP-8；Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8 A (VGS = 10V) ● RDS(ON)

文件：3.11057 Mbytes 頁(yè)數(shù)：7 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/4914/marking.html">4914；Package：SO-8；Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：147.85 Kbytes 頁(yè)數(shù)：8 Pages

AOSMD

萬(wàn)國(guó)半導(dǎo)體