N and P-Channel Enhancement Mode Power MOSFET

Description The 4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =8.0A RDS(ON)

文件：4.35527 Mbytes 頁數(shù)：10 Pages

TUOFENG

拓鋒半導體

Quick exhaust valve

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FESTOFesto Corporation.

費斯托費斯托（中國）有限公司

Heyco?-Tite EMC Brass Liquid Tight Cordgrips

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HEYCO

VHB Tape - Specialty Tapes

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3M

絲?。?strong>4616；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON)

文件：1.84608 Mbytes 頁數(shù)：7 Pages

KEXIN

科信電子

絲?。?strong>4616；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON)

文件：3.13403 Mbytes 頁數(shù)：7 Pages

KEXIN

科信電子

絲?。?strong>4616；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON)

文件：1.84608 Mbytes 頁數(shù)：7 Pages

KEXIN

科信電子

絲?。?strong>4616；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON)

文件：3.13403 Mbytes 頁數(shù)：7 Pages

KEXIN

科信電子

絲?。?strong>4616；Package：SOP-8L；N- and P-Channel Complementary, 20V,MOSFET

文件：2.37059 Mbytes 頁數(shù)：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導體股份有限公司

絲印：4616；Package：SOP-8L；N- and P-Channel Complementary, 20V,MOSFET

文件：2.37059 Mbytes 頁數(shù)：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導體股份有限公司