High Q, high self-resonant frequency

Special Features ? High Q, high self-resonant frequency ? High voltage application ? Single layer or 3-pi universal wound ? Low cost ? Varnish coated ? Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C ? Current to cause 35°C maximum temperature rise

文件：44.45 Kbytes 頁(yè)數(shù)：1 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N and P-Channel Enhancement Mode Power MOSFET

Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.9A RDS(ON)

文件：3.72956 Mbytes 頁(yè)數(shù)：8 Pages

TUOFENG

拓鋒半導(dǎo)體

Complementary High Density Trench MOSFET

文件：317.57 Kbytes 頁(yè)數(shù)：7 Pages

TUOFENG

拓鋒半導(dǎo)體

Binary reduction valve

文件：99.4 Kbytes 頁(yè)數(shù)：1 Pages

FESTOFesto Corporation.

費(fèi)斯托費(fèi)斯托（中國(guó)）有限公司

N- and P-Channel 30 V (D-S) MOSFET

文件：1.22669 Mbytes 頁(yè)數(shù)：14 Pages

VBSEMI

微碧半導(dǎo)體

TO-3 POWER TRANSISTOR SOCKET & MOUNTING KITS

文件：413.91 Kbytes 頁(yè)數(shù)：1 Pages

KEYSTONE

Keystone Electronics Corp.

絲?。?strong>4606；Package：DFN3030B-8L；30V Complementary Enhancement Mode MOSFET

Features ? High switching speed ? Improved dv/dt capability ? Low Gate Charge ? Low reverse transfer capacitance ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard

文件：1.26305 Mbytes 頁(yè)數(shù)：9 Pages

PANJIT

強(qiáng)茂

低壓MOS

CXW

誠(chéng)芯微科技

絲印：4606；Package：TO-220；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：108.36 Kbytes 頁(yè)數(shù)：6 Pages

A-POWER

富鼎先進(jìn)電子

絲?。?strong>4606；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

文件：1.54705 Mbytes 頁(yè)數(shù)：9 Pages

LEIDITECH

雷卯電子