絲印：45P40；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：684.94 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/45p40/marking.html">45P40；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The 45P40A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：867.62 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

PRESSURE SWITCHES

Features and Benefits ? Hermetically Sealed Sensor ? Snap Acting/Automatic Reset ? Custom Engineered Solutions ? Factory Calibrated Setpoints ? SPST or SPDT both normally open or closed contacts ? Electrically rated to 600V (44/45PS) ? High cycle life capability (42/44PS) ? Environmental s

文件：530.44 Kbytes 頁數(shù)：3 Pages

SENSATA

森薩塔

25PS, 42PS, 44PS, 45PS and 46PS Series Pressure Switches

文件：56.88 Kbytes 頁數(shù)：4 Pages

TI

德州儀器

包裝：盒 類別：開關(guān) 配件 描述：SECURITY CAP

APEM Inc.

絲?。?a target="_blank" title="Marking" href="/45p3llh6/marking.html">45P3LLH6；Package：PowerFLAT；P-channel -30 V, 11 m廓 typ., -45 A STripFET??H6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET? H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ?

文件：841.85 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/45p20/marking.html">45P20；Package：DFN3.3x3.3EP；P-Channel Enhancement Mode Power MOSFET

文件：234.8 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/45p03/marking.html">45P03；Package：TO-252；P-Ch Enhancement Mode Power MOSFET

文件：328.25 Kbytes 頁數(shù)：4 Pages

SECOS

喜可士

絲?。?a target="_blank" title="Marking" href="/45p03/marking.html">45P03；Package：SPR-8PP；P-Channel Enhancement Mode Power MOSFET

文件：367.64 Kbytes 頁數(shù)：4 Pages

SECOS

喜可士

絲?。?a target="_blank" title="Marking" href="/45p4llf6/marking.html">45P4LLF6；Package：DPAK；Automotive-grade P-channel -40 V, 12 m廓 typ., -50 A STripFET??F6 Power MOSFET in a DPAK package

文件：603.58 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體